| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming the CD value of a pattern in a groove (trench) and a recessed part (hole or via hole) at a resolution limit or below of a dual-damascene method with high precision. SOLUTION: A method of manufacturing a semiconductor device includes: a film deposition step S11 for depositing a first hard mask film and a second hard mask film on a layer to be etched; mask pattern formation steps S12 to S14 for first groove formation for forming the mask pattern for groove formation that is a pattern, having a first pitch and comprising the second hard mask film to be an etching mask in forming the pattern of the groove; and mask pattern formation steps S15 to S18 for forming a first recessed part for etching a first hard mask film, by using a second resist pattern comprising a second resist film having an opening part provided at a fourth pitch and a first organic film communicating with the opening part of the second resist film and having an opening part with a size smaller than the size of the opening part of the second resist film. COPYRIGHT: (C)2010,JPO&INPIT
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