发明名称 |
SEMICONDUCTOR DEVICE STORAGE CELL STRUCTURE, METHOD OF OPERATION, AND METHOD OF MANUFACTURE |
摘要 |
A method of fabricating an integrated circuit device storage cell may include forming a channel region comprising a semiconductor material doped to a first conductivity type; forming a store gate structure comprising a semiconductor material doped to a second conductivity type in contact with the channel region; and forming a control gate terminal from at least a portion of a semiconductor layer deposited on a substrate surface in contact with the channel region, the portion of the semiconductor layer being doped to the second conductivity type.
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申请公布号 |
US2010149854(A1) |
申请公布日期 |
2010.06.17 |
申请号 |
US20100710188 |
申请日期 |
2010.02.22 |
申请人 |
SUVOLTA, INC. |
发明人 |
VORA MADHU B. |
分类号 |
G11C11/24;G11C11/34;H01L21/8242;H01L27/108 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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