| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve field effect mobility of a thin-film transistor using an oxide semiconductor, and to suppress increase in off current even when the field effect mobility of a thin film transistor is improved. <P>SOLUTION: In a thin film transistor using an oxide semiconductor layer, a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
| 申请公布号 |
JP2010135766(A) |
申请公布日期 |
2010.06.17 |
| 申请号 |
JP20090249031 |
申请日期 |
2009.10.29 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
AKIMOTO KENGO;SASAKI TOSHINARI |
| 分类号 |
H01L29/786;G02F1/1368;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;H01L51/50 |
主分类号 |
H01L29/786 |
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