发明名称 SEMICONDUCTOR STRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To keep a state of contact of a curved semiconductor layer with another component for a long time. Ž<P>SOLUTION: A semiconductor structure 10 includes a first semiconductor layer 11, a second semiconductor layer 15 opposite to the first semiconductor layer 11, and a middle layer 12 disposed at a portion between the first semiconductor layer 11 and the second semiconductor layer 15. The second semiconductor layer 15 has an extension 15d extending to a side from the end of the middle layer 12. The extension 15d is curved toward the first semiconductor 11 side. A through-hole 17 is formed in the contact area of a portion of the extension 15d of the second semiconductor layer 15 with the first semiconductor layer 11 in the second semiconductor layer 15. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010135664(A) 申请公布日期 2010.06.17
申请号 JP20080311860 申请日期 2008.12.08
申请人 TOYOTA CENTRAL R&D LABS INC 发明人 FUJIYOSHI MOTOHIRO;NONOMURA YUTAKA
分类号 H01L23/12;H01L21/60;H01L29/84 主分类号 H01L23/12
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