| 摘要 |
<p>877,285. Semi-conductor devices. GENERAL ELECTRIC CO. Sept. 8, 1959 [Sept. 10, 1958], No. 30613/59. Class 37. A semi-conductor device comprises a ceramic or glass block 10 having spaced conductive areas 15, 16, 17 thereon, a semi-conductor bar 18 having end portions secured to conductive areas 15, 16 and its centre secured to conductive area 17 by a wire 19 and electrical leads to the conductive areas 15, 16, 17. The metallized areas 15, 16, 17 to which the semiconductive Si bar 18 is soldered at its ends are formed by spraying or vaporization. Al wire 19 is fused to bar 18 and soldered to metallized area 17. The block 10 is held in place by tapered plugs of solder between the leads and metallized areas 15, 16, 17, gold solder being used. The gold is alloyed with 1 % Sb or Al. The above device is a unijunction transistor. Conventional transistors, transistor tetrodes, diodes, &c. may be mounted in the same way. Additional holes and conductive areas allow for more connections. The block 10 may be of ceramic material such as Be oxide. The cap 2 is welded or soldered to the base 1 by means of opposed flanges.</p> |
