THIN FILM STRUCTURE FOR RESISTIVE RANDOM ACCESS MEMORY DEVICE HAVING NARROW SET VOLTAGE WINDOW AND THE FABRICATION METHOD THEREOF,申请号KR20080023488-传众专利搜索

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发明名称	THIN FILM STRUCTURE FOR RESISTIVE RANDOM ACCESS MEMORY DEVICE HAVING NARROW SET VOLTAGE WINDOW AND THE FABRICATION METHOD THEREOF
摘要
申请公布号	KR100963828(B1)	申请公布日期	2010.06.16
申请号	KR20080023488	申请日期	2008.03.13
申请人		发明人
分类号	H01L21/8247;H01L27/115	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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