Semiconductor memory device having fuse circuits and method of controlling the same

摘要

A non-volatile semiconductor memory device includes a read voltage generating circuit, a flash cell fuse circuit and a row decoder. The read voltage generating circuit generates a read voltage in response to a read enable signal and a trim code. The flash cell fuse circuit generates the trim code in response to a cell selection signal and a fuse word-line enable signal, the fuse word-line enable signal being activated after the read enable signal by a first delay time. The row decoder decodes the read voltage in response to a row address signal to generate a decoded read voltage, and to provide the decoded read voltage to a memory cell array.