| 发明名称 |
Integrated circuit fabrication process with minimal post-laser annealing dopant deactivation |
| 摘要 |
Post-laser annealing dopant deactivation is minimized by performing certain low temperature process steps prior to laser annealing.
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| 申请公布号 |
US7737036(B2) |
申请公布日期 |
2010.06.15 |
| 申请号 |
US20070836267 |
申请日期 |
2007.08.09 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MA YI;KRAUS PHILIP ALLAN;OLSEN CHRISTOPHER SEAN;AHMED KHALED Z.;MAYUR ABHILASH J. |
| 分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
| 代理机构 |
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