发明名称 BAW resonator bi-layer top electrode with zero etch undercut
摘要 A piezoelectric resonator includes a multi-layer top electrode configured such that a top most layer protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top-most layer. In one embodiment, the multi-layer top electrode is configured as a bi-layer, so that the upper layer of the bi-layer stack protects all sides of the underlying layer from subsequent etch process steps. In an alternative embodiment, at least the perimeter of a multi-layer top electrode is completely covered with overlapping interconnect metal.
申请公布号 US7737612(B1) 申请公布日期 2010.06.15
申请号 US20080080348 申请日期 2008.04.01
申请人 发明人 HAMOU HAIM BEN;WALL RALPH N.;BOUCHE GUILLAUME
分类号 H01L41/08;H01L41/047 主分类号 H01L41/08
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