THE NON-VOLATILE PROGRAMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND THE MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nonvolatility programmable switch device using a phase change memory device and a manufacturing method thereof are provided to reduce a miniaturization of a device and a consumption power by providing 4 terminal type device structure with easily dividing a write and a reading. CONSTITUTION: A semiconductor film layer(140) is formed on a first metal electrode layer(120). An insulator film layer is formed on the semiconductor film layer. The insulator thin film layer includes a pore region(220) exposing a part of the semiconductor film layer. A reaction material layer(240) fills in the pore region of the insulator film layer. A second metal electrode layer(260) is formed on upper part of the reaction material layer. A phase change operational layer(280) is formed by a solid-state reaction with reacting the reaction material layer and the semiconductor film layer.