| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging element which improves utilization efficiency of incident light on a peripheral part of an effective pixel, and reduces crosstalk. <P>SOLUTION: The solid-state imaging element includes a pixel part in which a plurality of pixels are two-dimensionally arranged on a substrate 22. The pixel 24 includes a first conductive type semiconductor layer 28 formed on the substrate 22, a photoelectric conversion part 18 formed in the semiconductor layer 28, and a separation part formed in the semiconductor layer 28, surrounding the photoelectric conversion part 18 in planar view, and having a first conductive type first semiconductor region 31 and a first conductive type second semiconductor region 32 formed in a position shallower than the first conductive region 31. In at least a part of the pixels, a distance from the first semiconductor region 31 to a third semiconductor region 33 is at least partially different depending on a position in the pixel part. <P>COPYRIGHT: (C)2010,JPO&INPIT |
