发明名称 DETECTION METHOD OF EPITAXIAL STACKING FAULTS ON EPITAXIAL WAFER
摘要 PURPOSE: A method for detecting the epitaxial stacking faults of an epitaxial wafer is provided to detect the epitaxial stacking faults in real time using a surface scanner with a scattering method. CONSTITUTION: A sample epitaxial wafer is prepared(S100). Faults of the sample epitaxial wafer are detected using a multi beam scanner(S110). The epitaxial stacking faults of an epitaxial wafer is classified by marking the kinds of the faults. The faults are detected using a scattering surface scanner. The detected faults by the multi-beam scanner are matched to the detected faults by the scattering surface scanner.
申请公布号 KR20100062528(A) 申请公布日期 2010.06.10
申请号 KR20080121211 申请日期 2008.12.02
申请人 SILTRON INC. 发明人 KIM, IN KYUM;KANG, HEE BOG;SHIM, JUNG JIN
分类号 H01L21/66 主分类号 H01L21/66
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