| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having metal oxide formed having a uniform composition distribution in a film-thickness direction even at the bottom of a recessed portion with a large aspect ratio. Ž<P>SOLUTION: The semiconductor device has a lower electrode, a metal oxide film, and an upper electrode laminated in order at a peripheral edge of the recessed portion and in the recessed portion. The metal oxide film contains at least a first metal element and a second metal element. The part of the metal oxide film which is formed at the bottom of the recessed portion is equal or smaller in rate of variation between the composition of the first metal element on the lower electrode side and the composition of the first metal element on the upper electrode side in comparison to the part formed at the peripheral edge of the recessed portion. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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