发明名称 METHOD OF ETCHING ORGANOSILOXANE DIELECTRIC MATERIAL AND SEMICONDUCTOR DEVICE THEREOF
摘要 In some embodiments, a method of etching an organosiloxane dielectric material can include: (a) providing the organosiloxane dielectric material; (b) providing a patterned mask over the organosiloxane dielectric material; and (c) reactive ion etching the organosiloxane dielectric material. Other embodiments are disclosed in this application.
申请公布号 WO2010065459(A2) 申请公布日期 2010.06.10
申请号 WO2009US66114 申请日期 2009.11.30
申请人 ARIZONA BOARD OF REGENTS, FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY;MARRS, MICHAEL 发明人 MARRS, MICHAEL
分类号 H01L21/306 主分类号 H01L21/306
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