| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a nitride single crystal body from which a large diameter nitride single crystal substrate can be obtained. Ž<P>SOLUTION: The method for producing the nitride single crystal body is the one for forming a bulky nitride single crystal body 7 on a seed substrate 5 by a vapor deposition method. The method includes: a process for heating the seed substrate 5; and a process for supplying a raw gas to the seed substrate 5 from a direction A parallel to or inclined from the seed substrate 5 and supplying the same raw gas as the raw gas supplied from the direction A to the seed substrate from such a direction B that the angle between the seed substrate 5 and itself is different from the angle between the seed substrate 5 and the direction A while rotating the seed substrate 5. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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