发明名称 |
LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME |
摘要 |
The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.
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申请公布号 |
US2010140653(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20100709105 |
申请日期 |
2010.02.19 |
申请人 |
LIN HUNG-CHENG;LEE CHIA-MING;CHYI JEN-INN |
发明人 |
LIN HUNG-CHENG;LEE CHIA-MING;CHYI JEN-INN |
分类号 |
H01L33/00;H01L33/22 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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