发明名称 LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME
摘要 The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.
申请公布号 US2010140653(A1) 申请公布日期 2010.06.10
申请号 US20100709105 申请日期 2010.02.19
申请人 LIN HUNG-CHENG;LEE CHIA-MING;CHYI JEN-INN 发明人 LIN HUNG-CHENG;LEE CHIA-MING;CHYI JEN-INN
分类号 H01L33/00;H01L33/22 主分类号 H01L33/00
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