| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared sensor capable of achieving high sensitivity and high response speed increased, and a method for manufacturing the same. SOLUTION: This infrared sensor includes an infrared sensor chip A and a member 20 for packaging. The sensor chip A comprises a temperature detector 3 and a heat insulator 4, which supports the temperature detector 3 such that the temperature detector 3 is disposed apart from a base substrate 1 while thermally insulating the temperature detector 3 from the base substrate 1. The member 20 forms an air-tight space 15 housing the temperature detector 3 and the heat insulator 4 of the sensor chip A. An N<SB>2</SB>gas atmosphere is given to the air-tight space 15. The heat insulator 4 comprises a porous silica film 41a, a first barrier film 41b, and a second barrier film 41c. The barrier film 41b is formed on a surface of the silica film 41a on the base substrate 1 side and consists of a silicon oxide film preventing water from adsorbing to the silica film 41a. The barrier film 41c is formed on a surface of the silica film 41a on the opposite side of the base substrate 1 side and consists of a silicon oxide film preventing water from adsorbing to the silica film 41a. COPYRIGHT: (C)2010,JPO&INPIT
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