| 摘要 |
PROBLEM TO BE SOLVED: To provide a display having a thin-film transistor whose off leakage current is reduced. SOLUTION: The display has the thin-film transistor formed on a substrate where a display part is formed. The thin-film transistor has a gate electrode, a gate insulating film formed covering the gate electrode, an island-shaped semiconductor layer formed on an upper surface of the gate insulating film to overlap the gate electrode without projecting from the gate electrode in plan view, an insulating film formed covering the semiconductor layer, and a pair of electrodes electrically connected to the semiconductor layer through a pair of through-holes bored in the insulating film. The semiconductor layer includes a sequential laminate of a crystalline semiconductor layer and an amorphous semiconductor layer, and the electrodes each comprise a sequential laminate of a semiconductor layer and a metal layer. COPYRIGHT: (C)2010,JPO&INPIT |
