发明名称 THIN FILM TRANSISTORS INCORPORATING INTERFACIAL CONDUCTIVE CLUSTERS
摘要 A field effect transistor includes a thin layer of discontinuous conductive clusters between the gate dielectric and the active layer. The active layer can include an organic semiconductor or a blend of organic semiconductor and polymer. Metals, metal oxides, predominantly non-carbon metallic materials, and/or carbon nanotubes may be used to form the layer of conductive clusters. The conductive clusters improve transistor performance and also facilitate transistor fabrication.
申请公布号 US2010140600(A1) 申请公布日期 2010.06.10
申请号 US20080596164 申请日期 2008.05.13
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 CLOUGH ROBERT S.;LEE TZU-CHEN;VOGEL DENNIS E.;ZHU PEIWANG
分类号 H01L51/10;H01L51/40 主分类号 H01L51/10
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