发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of preventing the deposit of reaction products on plasma light transparent surface, and has a detection window that makes it difficult to etch the plasma light transparent surface by plasma. Ž<P>SOLUTION: This plasma processing apparatus includes: a plasma processing chamber 10 that performs plasma etching, a detection window disposed on the wall surface of the plasma processing chamber that transmits plasma light generated by the plasma processing chamber, and a terminal point detection device that receives plasma light and detects the terminal point of the plasma etching based on the emission intensity of plasma light. The detection window includes a first member 34 that has transparency to plasma light, and a second member 35 disposed closer to the plasma processing chamber than the first member 34. The second member 35 includes a plurality of through holes 351 that lead plasma light plasma light from the plasma processing chamber to the first member 34. The plurality of through holes 351 are provided with a penetration prevention structure to stop the advance of objects generated in the plasma processing chamber entering the plurality of through holes 351. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010129721(A) 申请公布日期 2010.06.10
申请号 JP20080301939 申请日期 2008.11.27
申请人 RENESAS ELECTRONICS CORP 发明人 TSUNETSUGI KATSUNORI
分类号 H01L21/3065;H01L21/304 主分类号 H01L21/3065
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