An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
申请公布号
WO2010033434(A3)
申请公布日期
2010.06.10
申请号
WO2009US56716
申请日期
2009.09.11
申请人
LAM RESEARCH CORPORATION;CIRIGLIANO, PETER;ZHU, HELEN;KIM, JI SOO;SADJADI, S.M. REZA
发明人
CIRIGLIANO, PETER;ZHU, HELEN;KIM, JI SOO;SADJADI, S.M. REZA