发明名称 SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TRANSISTORS WITH ENERGY BARRIERS ADJACENT TO TRANSISTOR CHANNELS AND ASSOCIATED METHODS
摘要 A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.
申请公布号 WO2010065332(A2) 申请公布日期 2010.06.10
申请号 WO2009US65219 申请日期 2009.11.19
申请人 MICRON TECHNOLOGY, INC.;MOULI, CHANDRA V. 发明人 MOULI, CHANDRA V.
分类号 H01L21/336;H01L29/78 主分类号 H01L21/336
代理机构 代理人
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