| 摘要 |
894,700. Semi-conductor devices. SIEMENS & HALSKE A.G. Feb. 10, 1961 [Feb. 12, 1960], No. 5068/61. Class 37. In the production of a semi-conductor device, a gaseous compound of a semi-conductor is decomposed to deposit a layer of semi-conductor on to a heated semi-conductor body which is placed on a carrier body of semi-conductor material. The arrangement avoids harmful effects which may arise from the use of other material for the carrier body. Fig. 1 shows a silicon carrier body 1 supported between electrodes 8 and 9 in a reaction chamber. Silicon discs 2-7 are placed on the body 1 which is heated to decompose a reaction gas such as silicochloroform with hydrogen and possibly including a gaseous compound of a doping substance, whereby a semi-conductor of different resistivity or conductivity type is deposited on the silicon discs. The electrodes are preferably covered with silicon. Heating is effected by passing current through the carrier body firstly by using a high-voltage source and then a lower voltage as the temperature rises and resistivity falls. In an alternative arrangement heating is effected by use of an induction coil. High and low resistivity layers may be produced and may be used to provide diode rectifiers, solar cells, variable capacitors and transistors. Germanium may be used in place of silicon. |
