发明名称 STRAIN GAUGE PRESSURE SENSOR ON BASIS OF THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM
摘要 FIELD: instrument making. ^ SUBSTANCE: strain gauge pressure sensor on the basis of thin-film nano- and microelectromechanical system (NandMEMS) comprises body, NandMEMS installed in it and consisting of elastic element-membrane rigidly embedded along contour, heterogeneous structure formed on it from thin films of materials, sealing contact shoe, connector conductors. In sealing contact shoe strain gauges formed in heterogeneous structure and arranged along arc of circumference and in radial direction consist of identical strain elements in the form of squares connected by thin-film links included into measurement bridge. Centres of circumferential and radial strain gauge elements are arranged along circumference, radius r of which is determined by the following ratio r=0.707 rm, where rm - radius of membrane. ^ EFFECT: increased accuracy of pressure measurement under conditions of thermal shock effect due to improvement of linearity and reduction of membrane temperature deformations effect at output signal of measurement bridge. ^ 10 dwg
申请公布号 RU2391640(C1) 申请公布日期 2010.06.10
申请号 RU20090106513 申请日期 2009.02.24
申请人 GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "PENZENSKIJ GOSUDARSTVENNYJ UNIVERSITET" (PGU) 发明人 BELOZUBOV EVGENIJ MIKHAJLOVICH;VASIL'EV VALERIJ ANATOL'EVICH;VASIL'EVA SVETLANA ALEKSANDROVNA;GROMKOV NIKOLAJ VALENTINOVICH;TIKHONOV ANATOLIJ IVANOVICH
分类号 B82B3/00;G01L9/04 主分类号 B82B3/00
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