发明名称 Immersion photolithography with megasonic rinse
摘要 A method comprises forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated with at least one megasonic source, exposing the photoresist to radiation while immersed in a liquid, and developing the photoresist.
申请公布号 US7732123(B2) 申请公布日期 2010.06.08
申请号 US20040995653 申请日期 2004.11.23
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHANG CHING-YU
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
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