发明名称 |
Non-volatile memory device and method of operation therefor |
摘要 |
In one embodiment, the non-volatile memory device includes a well of a first conductivity type formed in a substrate, and a first plurality of memory cell transistors connected in series to a bit line formed in the well. A buffer is formed in the substrate outside the well and is connected to the bit line. At least one de-coupling transistor is configured to de-couple the buffer from the bit line, and the de-coupling transistor is formed in the well.
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申请公布号 |
US7733695(B2) |
申请公布日期 |
2010.06.08 |
申请号 |
US20070653866 |
申请日期 |
2007.01.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DAE-YONG;HWANG SANG-WON;PARK JUN-YONG |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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