| 摘要 |
A second-conductivity-type transistor includes a source and drain formed by a second-conductivity-type diffusion layer formed on a first-conductivity-type semiconductor layer; and a gate formed on the first-conductivity-type semiconductor layer sandwiched between the second-conductivity-type diffusion layer through an insulating film A first-conductivity-type transistor includes a source and drain formed by a first-conductivity-type diffusion layer formed on a second-conductivity-type semiconductor layer; and a gate formed on the second-conductivity-type semiconductor layer sandwiched between the first-conductivity-type diffusion layer through an insulating film. The second-conductivity-type diffusion layer for configuring the second-conductivity-type transistor is divided into a plurality of regions, each of which being separated by a device isolation region formed on the first-conductivity-type semiconductor layer. The first-conductivity-type diffusion layer for configuring the first-conductivity-type transistor is divided into a plurality of regions, each of which being separated by a device isolation region formed on the second-conductivity-type semiconductor layer.
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