Method of driving 1-transistor type DRAM having an NMOS overlain on top of an SOI layer

摘要

Driving a 1-transistor DRAM composed of an NMOS on top of a SOI layer such that the 1-transistor DRAM has a corresponding parasitic bipolar transistor component includes precharging, shifting, and deactivating steps. Implementing these steps can result in enhancing the performance of reading, writing and storing binary logic information within the 1-transistor DRAM memory device.