NON-VOLATILE MEMORY DEVICES AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A non-volatile memory devices and a method of forming the same are provided to improve a coupling ratio by increasing a contact area of a floating gate and an inter insulating layer. CONSTITUTION: In a non-volatile memory devices and a method of forming the same, an element isolation film(110) is formed on a substrate(100). The element isolation film defines an active area. A turner insulating layer is formed on the top of the substrate. The floating gate(181) is formed on the turner insulating layer. The floating gate has a concavo-convex on side. The floating gate comprises a first conductive pattern(133) and a second conductive pattern(143).