SILICON SINGLE CRYSTAL AND METHOD FOR GROWING THEREOF, AND SILICON WAFER AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A silicon single crystal and an upbringing method, a silicon wafer and a manufacturing method thereof are provided to manufacture a defect-free crystal by preventing a generation of a hydrogen defect in a pulling silicon single crystal by a hydrogen doping. CONSTITUTION: A crystal upbringing is processed in an atmosphere less than 400Pa over 40Pa. A cooling status controlling process sets a dwell time of a hydrogen collection temperature range over 550°C less than 850°C into over 100 minutes less than 480 minutes. The hydrogen is doped in the silicon single crystal through a melting material(c) by making an atmosphere gas into the atmosphere containing the hydrogen in an increasing the silicon single crystal. The single crystal is chilled from a silicon melting point according to increasing single crystal. A gas of the hydrogen-contained material is a hydrogen gas.