MILLIMETER-WAVE AMPLIFIER AND BIAS CIRCUIT FOR THE SAME
摘要
PURPOSE: A super high frequency amplifier and a bias circuit for the same are provided to optimize performance by adjusting a source voltage, regardless of a change in the properties of a depletion-type FET(Field Effect Transistor) due to the process change. CONSTITUTION: An amplifier circuit amplifies a high frequency signal through a depletion-type FET(30). An input matching circuit(20) matches the inputted high frequency signal in the depletion-type FET. An output matching circuit(40) matches the amplified signal, and thereby outputs the matched signal. A bias circuit(80) gives a negative value to a voltage between a gate and a source of the depletion-type FET by applying a positive voltage to the source of the depletion-type FET. The bias circuit tunes the voltage between the gate and the source by changing the positive voltage applied to the source.
申请公布号
KR20100060107(A)
申请公布日期
2010.06.07
申请号
KR20080118553
申请日期
2008.11.27
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
CHANG, WOO JIN;MUN, JAE KYOUNG;JI, HONG GU;AHN, HO KYUN;LIM, JONG WON;KANG, DONG MIN;KIM, DONG YOUNG;LEE, SANG HEUNG;KIM, HAE CHEON;NAM, EUN SOO