| 摘要 |
PURPOSE: A method of forming a gate spacer of a semiconductor device is provided to improve the reliability of a semiconductor device by making doping uniform when implanting ion into an active region and a poly. CONSTITUTION: A silicon oxide film(200) and a silicon nitride film are successively deposited on a semiconductor substrate(100) in which an isolation region and a gate electrode are formed. The silicon nitride film and the silicon oxide film are successively etched in order to form a spacer. The silicon oxide film remaining on the semiconductor substrate having no the spacer is removed. The silicon oxide film is deposited on the semiconductor substrate having the spacer.
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