发明名称 |
ELECTRO-OPTICAL MODULATOR |
摘要 |
PURPOSE: An electro-optical modulator is provided to select at least one shot-wave by controlling voltage supplied a first electrode and a second electrode. CONSTITUTION: An n-type nitride semiconductor layer(210) comprises a first electrode. A p-type nitride semiconductor layer(230) comprises a second electrode. An active layer(220) is arranged between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and is formed with at least two sub-active layers. Each sub-active layer is formed with the barrier and quantum-well layer which is made of GaN. The quantum-well layer which is made of indium gallium nitride(InGaN) is formed on the barrier. |
申请公布号 |
KR20100060559(A) |
申请公布日期 |
2010.06.07 |
申请号 |
KR20080119191 |
申请日期 |
2008.11.27 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
PARK, YOUNG MIN;CHUNG, HUN JAE;LEE, SOO MIN;SON, JOONG KON |
分类号 |
H01L33/08;H01L33/06 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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