| 摘要 |
PURPOSE: A semiconductor and a manufacturing method thereof are provided to minimize dark defect by forming an epi layer for caring silicon loss before forming the TEOS(tetraethylorthosilicate) film. CONSTITUTION: A trench is formed on a substrate(100). An epi layer(120) is formed on the trench surface. An insulating layer filling up the trench is formed on the epi layer. The insulating layer is planarized and the element isolation film(130) is formed. The epi layer is the silicon epi layer which is not added with the dopant.
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