| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of improving operation guarantee of data reading even if there is environmental fluctuation or manufacturing variance. <P>SOLUTION: The nonvolatile memory device includes a memory cell Mcell for storing data based on presence or absence of electrons accumulated in a floating gate, a read reference current generation circuit 120 for generating a read reference current Iref for reading data from the memory cell Mcell based on a constant current from a constant current generation circuit 121 included therein, and a read voltage generation circuit 140 for generating a read voltage Vwlr to be applied to the control gate of the memory cell Mcell during data reading. The read reference current generation circuit 120 generates a monitor voltage Vmon that varies according to variation of the read reference current Iref and a threshold voltage of the memory cell Mcell. The read voltage generation circuit 140 generates the read voltage based on the monitor voltage. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
