| 摘要 |
A device includes at least one piezoacoustic resonator element (21-29) having at least one piezoelectric layer (21a-29a) and two electrodes (21b-29b, 21c-29c) applied to the piezoelectric layer (21a-29a). The piezoacoustic resonator element (21-29) is configured in such a manner that, when a voltage is applied to the piezoelectric layer (21a-29a) by electrodes (21b-29b, 21c-29c), a bulk wave of the piezoelectric layer (21a-29a) is induced with a resonant frequency. The device also includes a heating device with a heating element (211-219), integrated into the piezoacoustic resonator element (21-29), for controlling the working temperature of the device.
|
