An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.
申请公布号
US2010134668(A1)
申请公布日期
2010.06.03
申请号
US20090591721
申请日期
2009.11.30
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK JONG EUN;LEE YONG JEI;AHN JUNG CHAK;JANG DONG-YOON