| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solar energy cell where a Ge<SB>x</SB>Si<SB>1-x</SB>buffer layer is formed on a silicon wafer. <P>SOLUTION: In the method for forming an SiGe layer of a solar energy cell, in order to promote the growth of the Ge of high quality on an Si substrate, Si<SP>+</SP>is poured on the Si substrate to reinforce the softening of distortion at the junction between the transformed Ge<SB>x</SB>Si<SB>1-x</SB>buffer layer 103 and the Si substrate 101. Then Ge<SB>x</SB>Si<SB>1-x</SB>buffer layers (Si/Ge<SB>0.8</SB>Si<SB>0.2</SB>/Ge<SB>0.9</SB>Si<SB>0.1</SB>/Ge) 103-105 are grown on the Si substrate by UHVCVD, and a pure Ge layer of a low transfer density is grown on the Ge<SB>x</SB>Si<SB>1-x</SB>buffer layer. Finally, highly efficient group III-V solar cells 201-206 are grown on the Ge<SB>x</SB>Si<SB>1-x</SB>buffer layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
