发明名称 METHOD FOR REMOVING ETCHING RESIDUES FROM SEMICONDUCTOR COMPONENTS
摘要 A method for cleaning structured surfaces of semiconductor components to remove photoresist and etching residues after the etching of the surface, comprising: a) treatment of the surface with an acidic aqueous solution comprising one or more acids and one or more oxidizing agents, b) removal of the photoresist and c) washing with demineralized water in the stated sequence.
申请公布号 US2010136794(A1) 申请公布日期 2010.06.03
申请号 US20080598443 申请日期 2008.05.09
申请人 BASF SE 发明人 FERSTL BERTHOLD;KUEHNER ANDREAS
分类号 H01L21/306 主分类号 H01L21/306
代理机构 代理人
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