| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve reliability of a high breakdown voltage type transistor which transfers a high potential to word lines. <P>SOLUTION: The nonvolatile semiconductor memory includes N-channel MOS transistors 21(BK1) to be connected between the word lines WL1-WLn in a NAND block BK1 and potential transfer lines CG1-CGn, and N-channel MOS transistors 21(BK2) to be connected between the word lines WL1-WLn in a NAND block BK2 and the potential transfer lines CG1-CGn. When data are erased with respect to a memory cell MC in the NAND block BK1, a first potential (Vera+Vadd) with a plus value is applied to a semiconductor substrate, and a second potential Vadd with a plus value lower than the first potential (Vera+Vadd) is applied to the potential transfer lines CG1-CGn, to turn the N-channel MOS transistors 21(BK1) on and to turn the N-channel MOS transistors 21(BK2) off. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
