| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate of which parasitic capacity is reduced, and to provide a compound semiconductor device. SOLUTION: There are provided: a substrate 11 made of Si; a buffer layer 14 (laminated structure) formed by alternately stacking a first semiconductor layer 12 formed on the substrate 11 and made of AlN and a second semiconductor layer 13 made of GaN and doped with iron Fe; a channel layer 15 formed on the buffer layer 14 and used as a first growth layer made of GaN; a barrier layer 16 formed on the channel layer 15 and used as a second growth layer made of AlGaN; an insulation film 18 that is formed on the barrier layer 16 and includes a prescribed opening; and gate, source, and drain electrodes G, S, D formed on the barrier layer 16 via the opening of the insulation film 18. COPYRIGHT: (C)2010,JPO&INPIT |
