| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing increase of the installation area of a fuse without laminating a laser fuse. Ž<P>SOLUTION: In a laminated fuse unit 100, a gate conductor type electric fuse 2 where a gate oxide film 27 of an MOSFET having P+ regions 12, 21 and a gate electrode 24 functions as a fuse is laminated above a deep trench type electric fuse 1 where a capacitor insulation film 17 formed on sidewalls of a trench capacitor 11 functions as a fuse. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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