发明名称 |
Adjustable Write Pulse Generator Within a Chalcogenide Memory Device |
摘要 |
An adjustable write pulse generator is disclosed. The adjustable write pulse generator includes a band-gap reference current, a programmable ring oscillator, a frequency divider and a single pulse generator. The band-gap reference current circuit generates a well-compensated current over a predetermined range of temperatures needed to program a chalcogenide memory cell. The programmable ring oscillator generates a first set of continuous write “0” and write “1” pulse signals based on the well-compensated current. The frequency divider then divides the first set of continuous write “0” and write “1” pulse signals into a second set of continuous write “0” and write “1” pulse signals. The single pulse generator subsequently converts the second set of continuous write “0” and write “1” pulse signals into a single write “0” pulse signal or a single write “1” pulse signal when programming the chalcogenide memory cell.
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申请公布号 |
US2010135070(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
US20080531851 |
申请日期 |
2008.12.01 |
申请人 |
LI BIN;BUMGARNER ADAM MATTHEW;PIRKL DANIEL;MICHAEL GEORGE |
发明人 |
LI BIN;BUMGARNER ADAM MATTHEW;PIRKL DANIEL;MICHAEL GEORGE |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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地址 |
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