发明名称 DEVELOPMENT DEVICE, DEVELOPMENT METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To reduce air bubbles generated from developer liquid by a simple configuration, and to reduce undissected defects of a resist pattern. SOLUTION: This development device suppresses foaming of developer liquid in a development room by being provided with a discharge section that discharges developer liquid on an exposed substrate, a development room that accommodates the substrate and the discharge section, and a pressure device that pressurizes the inside of the development room. Otherwise, the air bubbles generated from developer liquid inside the development room are suppressed by being provided with a developer liquid tank that supplies developer liquid to the discharge section and a pressure reduction device that depressurizes the inside of the developer liquid tank, thereby removing gas in the developer liquid within the developer liquid tank by force. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010123838(A) 申请公布日期 2010.06.03
申请号 JP20080297674 申请日期 2008.11.21
申请人 SEIKO EPSON CORP 发明人 SAITO TORU
分类号 H01L21/027;G03F7/30 主分类号 H01L21/027
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