发明名称 HIGH POWER SEMICONDUCTOR LASER DIODES
摘要 A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTEbar), the submount has a second coefficient of thermal expansion (CTEsub), and the cooler has a third coefficient of thermal expansion (CTEcool) the third coefficient (CTEcool) being higher than both said first coefficient (CTEbar) and said second coefficient (CTEsub). Contrary to the usual approach with a CTEsub matching the CTEbar, the second coefficient (CTEsub) is selected lower than both said first coefficient (CTEbar) and said third coefficient (CTEcool) according to the invention. A preferred range is CTEsub=k*CTEbar, with 0.4<k<0.9. The submount may consist of or comprise two or more layers of different materials having different CTEs, e.g. a Cu layer of about 10-20 mum thickness and a Mo layer of about 200-300 mum thickness, resulting in a CTEsub which varies across the submount's thickness. Alternatively, the submount may consist of a single, more or less homogeneous material with a CTEsub varying across the submount's thickness. A method for making such a high power laser source includes selecting a submount whose CTEsub lies between the CTEcool of the cooler and the CTEbar of the bar of laser diodes and hard soldering the bar and the cooler to the submount.
申请公布号 EP2191546(A2) 申请公布日期 2010.06.02
申请号 EP20080807113 申请日期 2008.09.18
申请人 OCLARO TECHNOLOGY PLC 发明人 KREJCI, MARTIN;LICHTENSTEIN, NORBERT;WEISS, STEFAN;TROGER, HANS JOERG
分类号 H01S5/024 主分类号 H01S5/024
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