| 摘要 |
<p>PROBLEM TO BE SOLVED: To flatten irregularities due to gate wiring in a bottom-gate type TFT, using a crystalline semiconductor film as an active layer. SOLUTION: An underlying film 11, a gate wiring 12 and a gate insulated film 13 are laminated in this order on a substrate 10. The film 13 is a laminated film formed by laminating a planarization film 13a consisting of an insulative organic resin film, such as a BCB(benzo cyclobutene) resin film, a polyimide film and an acrylic resin film, and an insulating inorganic film 13b. Since the surface of the film 13 is flattened by the film 13a, a flat amorphous semiconductor film 15 can be formed on the surface of the film 13. Thereby, since the focal lengths of the film 15 are not made different from each other in each part of the film 15 in a laser crystallization, the film 15 can be crystallized uniformly. Moreover, as the end parts of the wiring 12 can be coated with the thick film 13a, electrons and holes are prevented from being injected into the film 13 or the film 13 breaking down electrostatically.</p> |
