| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a producing method of a capacitor insulation film by using an ECR sputtering apparatus which has high dielectrical characteristics, contributing to the creations of high-speed and microminiaturized semiconductor memory elements, etc. SOLUTION: By using as the target material a BST[(Ba, SrTiO-based compositoin], STO[SrTiO-based composition], or PZT[Pb(Zr, Ti)O-based composition], and by using as a sputtering gas a mixed gas, comprising O2 and an inert gas of at least one kind of Kr or Xe or a mixed gas having its main component comprising O2 and an inert gas of at least one kind of kr or Xe, there is formed on an electrode film a BST film, a STO film, or a PZT film using ECR sputtering. In this case, the percentage of the partial pressure of O2 in the mixed gas is set to 1-10% of full gas pressure. Since an obtained capacitor insulation film has a high dielectric constant and the increases in its leakage current and dielectric loss are suppressed, it is useful as an insulation film having an improved dielectric characteristic.</p> |
