| 摘要 |
A wafer for active layer is produced by a method comprising a slicing step for cutting out a disc-shaped wafer from a single crystal silicon ingot, a beveling step for beveling an edge portion of the sliced wafer, a grinding step for grinding each surface of the beveled wafer, an etching step for etching the surface of the ground wafer and a single-sided mirror-polishing step for mirror-polishing only one surface of the etched wafer.
|
