| 摘要 |
A semiconductor device and a fabrication method for the semiconductor device which can remove the sacrifice layer deposited on the semiconductor device surface in a short time and whose manufacturing yield can be improved are provided. The semiconductor device and the fabrication method for the semiconductor device includes a field effect transistor 4 including a gate electrode 1, a drain electrode 2, and a source electrode 3 formed on a semiconductor substrate; and a hollow protective film 5 for covering the gate electrode 1, the drain electrode 2, and the source electrode 3, and being provided on the semiconductor substrate 4A. The hollow protective film 5 includes a 1st cap layer 7; a second cap layer 10 placed on the first cap layer 7; a plurality of openings 12 formed on the position of the first cap layer 7 of the upper part of the drain electrode 2 and the source electrode 3; a sealed part 12A for sealing the openings 12 by the second cap layer 10, wherein oxygen plasma is supplied through the openings 12, and ashing removal of the sacrifice layer 6 is performed. |
