发明名称 CHARGE PUMP CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE HAVING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a new charge pump circuit composed of a parallel connection system and a serial connection system. Ž<P>SOLUTION: The charge pump circuit includes: a first charge pump unit having first and second capacitors 101, 102 connected in parallel, and causing the second capacitor 102 to generate a first charge pump voltage V1 by pumping the first capacitor 101; and a second charge pump unit having a third capacitor 103 connected in parallel to the second capacitor 102, and causing the second capacitor 102 to generate a second charge pump voltage V2 by further pumping the first charge pump voltage V1 stored in the second capacitor 102 via the third capacitor 103. The the latter stage capacitor connected in parallel is pumped by the serial connecting system, thereby lowering a voltage applied between capacitor electrodes of the latter stage capacitor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010119206(A) 申请公布日期 2010.05.27
申请号 JP20080290246 申请日期 2008.11.12
申请人 ELPIDA MEMORY INC 发明人 MATANO TATSUYA
分类号 H02M3/07 主分类号 H02M3/07
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